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1

A model of ionization equilibrium and Mott transition in boron doped crystalline diamond

N. A. Poklonski, S. A. Vyrko, O. N. Poklonskaya, A. G. Zabrodskii

Journal:

physica status solidi (b)

Year:

2009

Language:

english

File:

PDF, 1.11 MB

english, 2009

2

The dipole model of narrowing of the energy gap between the Hubbard bands in slightly compensated semiconductors

N. A. Poklonski, S. A. Vyrko, A. G. Zabrodskiĭ

Journal:

Year:

2006

Language:

english

File:

PDF, 302 KB

english, 2006

3

A Quasi-Classical Model of the Hubbard Gap in Lightly Compensated Semiconductors

Poklonski, N. A., Vyrko, S. A., Kovalev, A. I., Zabrodskii, A. G.

Journal:

Year:

2016

Language:

english

File:

PDF, 471 KB

english, 2016

4

Ionized Impurity Scattering of Charge Carriers in Crystalline Semiconductors

N. A. Poklonski, A. V. Denisenko, S. Yu. Lopatin, A. I. Siaglo

Journal:

physica status solidi (b)

Year:

1998

Language:

english

File:

PDF, 249 KB

english, 1998

5

Model of hopping dc conductivity via nearest neighbor boron atoms in moderately compensated diamond crystals

N.A. Poklonski, S.A. Vyrko, A.G. Zabrodskii

Journal:

Solid State Communications

Year:

2009

Language:

english

File:

PDF, 1.07 MB

english, 2009

6

A comparison of two-particle models for conduction electron scattering on hydrogen-like impurity ions in non-degenerate semiconductors

N. A. Poklonski, A. A. Kocherzhenko, S. A. Vyrko, A. T. Vlassov

Journal:

physica status solidi (b)

Year:

2007

Language:

english

File:

PDF, 640 KB

english, 2007

7

Screening of electrostatic fields in crystalline semiconductors by electrons hopping over defects

N. A. Poklonski, V. F. Stelmakh

Journal:

physica status solidi (b)

Year:

1983

Language:

english

File:

PDF, 299 KB

english, 1983

8

The temperature dependence of the AC hopping conductivity of lightly compensated semiconductors

B. V. Klimkovich, N. A. Poklonski, V. F. Stelmakh

Journal:

physica status solidi (b)

Year:

1986

Language:

english

File:

PDF, 407 KB

english, 1986

9

Impedance and barrier capacitance of silicon diodes implanted with high-energy Xe ions

N.A. Poklonski, N.I. Gorbachuk, S.V. Shpakovski, V.A. Filipenia, S.B. Lastovskii, V.A. Skuratov, A. Wieck, V.P. Markevich

Journal:

Microelectronics Reliability

Year:

2010

Language:

english

File:

PDF, 407 KB

english, 2010

10

Nonlinear screening of the field of a dopant ion on the metal side of the Mott phase transition in semiconductors

N. A. Poklonski, S. A. Vyrko

Journal:

Physics of the Solid State

Year:

2002

Language:

english

File:

PDF, 73 KB

english, 2002

11

Electrostatic models of insulator-metal and metal-insulator concentration phase transitions in Ge and Si crystals doped by hydrogen-like impurities

N. A. Poklonski, S. A. Vyrko, A. G. Zabrodskii

Journal:

Physics of the Solid State

Year:

2004

Language:

english

File:

PDF, 85 KB

english, 2004

12

Fluctuation model of the high-frequency hopping electrical conductivity of moderately compensated semiconductors with hydrogenic impurities

N. A. Poklonski, S. A. Vyrko, A. G. Zabrodskii

Journal:

Physics of the Solid State

Year:

2005

Language:

english

File:

PDF, 120 KB

english, 2005

13

Quasi-static capacitance of a weakly compensated semiconductor with hopping conduction (on the example ofp-Si:B)

N. A. Poklonski, S. A. Vyrko, A. G. Zabrodskii

Journal:

Year:

2007

Language:

english

File:

PDF, 253 KB

english, 2007

14

Field effect and capacitance of silicon crystals with hopping conductivity over point radiation defects pinning the Fermi level

N. A. Poklonski, S. A. Vyrko, A. G. Zabrodskii

Journal:

Year:

2007

Language:

english

File:

PDF, 266 KB

english, 2007

15

Simulation of Hopping Transport Based on Charge Carrier Localization Times Derived for a Two-Level System†

Kocherzhenko, Aleksey A., Grozema, Ferdinand C., Vyrko, Sergey A., Poklonski, Nikolai A., Siebbeles, Laurens D. A.

Journal:

The Journal of Physical Chemistry C

Year:

2010

Language:

english

File:

PDF, 162 KB

english, 2010

16

Influence of electron irradiation on p-n junctions in SiGe superlattices

Siahlo, Andrei I., Poklonski, Nikolai A., Lastovski, Stanislav B., Presting, Hartmut, Sobolev, Nikolai A.

Journal:

physica status solidi (b)

Year:

2015

Language:

english

File:

PDF, 452 KB

english, 2015

17

Quasiclassical description of the nearest-neighbor hopping dc conduction via hydrogen-like donors in intermediately compensated GaAs crystals

Poklonski, N A, Vyrko, S A, Zabrodskii, A G

Journal:

Semiconductor Science and Technology

Year:

2010

Language:

english

File:

PDF, 234 KB

english, 2010

18

Transition temperature from band to hopping direct current conduction in crystalline semiconductors with hydrogen-like impurities: Heat versus Coulomb attraction

Poklonski, N. A., Vyrko, S. A., Poklonskaya, O. N., Zabrodskii, A. G.

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 612 KB

english, 2011

19

AA stacking, tribological and electronic properties of double-layer graphene with krypton spacer

Popov, Andrey M., Lebedeva, Irina V., Knizhnik, Andrey A., Lozovik, Yurii E., Potapkin, Boris V., Poklonski, Nikolai A., Siahlo, Andrei I., Vyrko, Sergey A.

Journal:

The Journal of Chemical Physics

Year:

2013

Language:

english

File:

PDF, 1.88 MB

english, 2013

20

Nitrogen-Doped Chemical Vapour Deposited Diamond: a New Material for Room-Temperature Solid State Maser

Poklonski, N. A, Lapchuk, N. M, Khomich, A. V, Fan-Xiu, Lu, Wei-Zhong, Tang, Ralchenko, V. G, Vlasov, I. I, Chukichev, M. V, Munkhtsetseg, Sambuu

Journal:

Chinese Physics Letters

Year:

2007

Language:

english

File:

PDF, 220 KB

english, 2007

21

Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example ofp-Ge:Ga)

Poklonski, N. A., Vyrko, S. A., Poklonskaya, O. N., Zabrodskii, A. G.

Journal:

Year:

2016

Language:

english

File:

PDF, 494 KB

english, 2016

22

DLTS spectra of silicon diodes with p+-n-junction irradiated with high energy krypton ions

Poklonski, Nikolai A., Gorbachuk, Nikolay I., Shpakovski, Sergey V., Filipenia, Viktor A., Turtsevich, Arkady S., Shvedov, Sergey V., Quang, Nha Vo, Binh Nguyen, Thi Thanh, Skuratov, Vladimir A., Wiec

Journal:

Modern Electronic Materials

Year:

2016

Language:

english

File:

PDF, 674 KB

english, 2016

23

Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamond

Poklonski, N. A., Vyrko, S. A., Poklonskaya, O. N., Kovalev, A. I., Zabrodskii, A. G.

Journal:

Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 638 KB

english, 2016

24

Drift-diffusion model of hole migration in diamond crystals via states of valence and acceptor bands

Poklonski, N A, Vyrko, S A, Kovalev, A I, Dzeraviaha, A N

Journal:

Journal of Physics Communications

Year:

2018

Language:

english

File:

PDF, 698 KB

english, 2018

25

Quasi-Classical Model of the Static Electrical Conductivity of Heavily Doped Degenerate Semiconductors at Low Temperatures

Poklonski, N. A., Vyrko, S. A., Dzeraviaha, A. N.

Journal:

Year:

2018

Language:

english

File:

PDF, 666 KB

english, 2018

26

Spin-Phonon Magnetic Resonance of Conduction Electrons in Indium Antimonide Crystals

Poklonski, N. A., Dzeraviaha, A. N., Vyrko, S. A.

Journal:

Journal of Applied Spectroscopy

Year:

2020

File:

PDF, 454 KB

2020

27

Electrical properties of silicon diodes with p+n junctions irradiated with 197Au+26 swift heavy ions

N.A. Poklonski, N.I. Gorbachuk, S.V. Shpakovski, A.V. Petrov, S.B. Lastovskii, D. Fink, A. Wieck

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2008

Language:

english

File:

PDF, 556 KB

english, 2008

28

Kinetics of reverse resistance recovery of silicon diodes: The role of the distance the metallurgical p+n-junction-defect layer formed by 250 MeV krypton implantation

N.A. Poklonski, N.I. Gorbachuk, S.V. Shpakovski, V.A. Filipenia, V.A. Skuratov, A. Wieck

Journal:

Physica B: Condensed Matter

Year:

2009

Language:

english

File:

PDF, 182 KB

english, 2009

29

Uniaxially deformed (5,5) carbon nanotube: Structural transitions

N.A. Poklonski, E.F. Kislyakov, Nguyen Ngoc Hieu, O.N. Bubel’, S.A. Vyrko, A.M. Popov, Yu.E. Lozovik

Journal:

Chemical Physics Letters

Year:

2008

Language:

english

File:

PDF, 260 KB

english, 2008

30

Effect of Peierls transition in armchair carbon nanotube on dynamical behaviour of encapsulated fullerene

Nikolai A Poklonski, Sergey A Vyrko, Eugene F Kislyakov, Nguyen Ngoc Hieu, Oleg N Bubel’, Andrei M Popov, Yurii E Lozovik, Andrey A Knizhnik, Irina V Lebedeva, Nguyen Ai Viet

Journal:

Nanoscale Research Letters

Year:

2011

Language:

english

File:

PDF, 582 KB

english, 2011

31

Simulation of dc conductance of two-dimensional heterogeneous system: application to carbon wires made by ion irradiation on polycrystalline diamond

N. A. Poklonski, A. A. Kocherzhenko, A. I. Benediktovitch, V. V. Mitsianok, A. M. Zaitsev

Journal:

physica status solidi (b)

Year:

2006

Language:

english

File:

PDF, 556 KB

english, 2006

32

Interwall conductance in double-walled armchair carbon nanotubes

Nikolai A. Poklonski, Nguyen Ngoc Hieu, Eugene F. Kislyakov, Sergey A. Vyrko, Andrei I. Siahlo, Andrei M. Popov, Yurii E. Lozovik

Journal:

Physics Letters A

Year:

2008

Language:

english

File:

PDF, 233 KB

english, 2008

33

Electrostatic model of band-gap renormalization and the photoluminescence line shape in a GaAs/AlGaAs two-dimensional layer at a high excitation level

N. A. Poklonski, A. I. Siaglo

Journal:

Physics of the Solid State

Year:

2001

Language:

english

File:

PDF, 112 KB

english, 2001

34

One-dimensional quantum transport in lead phthalocyanine nanostructures

N. A. Poklonski, E. F. Kislyakov, D. I. Sagaidak, A. I. Siaglo, G. G. Fedoruk

Journal:

Technical Physics Letters

Year:

2001

Language:

english

File:

PDF, 62 KB

english, 2001

35

A lattice model of thermopower in hopping conduction: Application to neutron-doped crystalline germanium

N. A. Poklonski, S. Yu. Lopatin

Journal:

Physics of the Solid State

Year:

2001

Language:

english

File:

PDF, 121 KB

english, 2001

36

The Rameau-Shockley relation for anRCLcircuit

N. A. Poklonski, V. V. Mityanok, S. A. Vyrko

Journal:

Technical Physics Letters

Year:

2002

Language:

english

File:

PDF, 33 KB

english, 2002

37

Ramo-Shockley relation for a seriesRCLcircuit

N. A. Poklonski, S. A. Vyrko, A. A. Kocherzhenko

Journal:

Technical Physics

Year:

2004

Language:

english

File:

PDF, 61 KB

english, 2004

38

Inverted EPR signal from nitrogen defects in a synthetic diamond single crystal at room temperature

N. A. Poklonski, N. M. Lapchuk, T. M. Lapchuk

Journal:

Year:

2004

Language:

english

File:

PDF, 46 KB

english, 2004

39

Nanostructuring of crystalline grains of natural diamond using ionizing radiation

N. A. Poklonski, T. M. Lapchuk, N. I. Gorbachuk, V. A. Nikolaenko, I. V. Bachuchin

Journal:

Year:

2005

Language:

english

File:

PDF, 111 KB

english, 2005

40

Negative capacitance (impedance of the inductive type) of siliconp+-njunctions irradiated with fast electrons

N. A. Poklonski, S. V. Shpakovski, N. I. Gorbachuk, S. B. Lastovskii

Journal:

Year:

2006

Language:

english

File:

PDF, 218 KB

english, 2006

41

Calculation of capacitance of self-compensated semiconductors with intercenter hops of one and two electrons (by the example of silicon with radiation defects)

N. A. Poklonski, S. A. Vyrko, A. G. Zabrodskii

Journal:

Year:

2008

Language:

english

File:

PDF, 304 KB

english, 2008

42

Optical and paramagnetic properties of synthetic diamond crystals irradiated with electrons and annealed

N. A. Poklonski, G. A. Gusakov, V. G. Bayev, N. M. Lapchuk

Journal:

Year:

2009

Language:

english

File:

PDF, 232 KB

english, 2009

43

Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons

N. A. Poklonski, N. I. Gorbachuk, S. V. Shpakovski, S. B. Lastovskii, A. Wieck

Journal:

Year:

2010

Language:

english

File:

PDF, 220 KB

english, 2010

44

Impedance of Si/SiO2composites in the vicinity of the percolation threshold

N. A. Poklonski, N. I. Gorbachuk, D. Aleinikova

Journal:

Physics of the Solid State

Year:

2011

Language:

english

File:

PDF, 223 KB

english, 2011

45

Equivalent circuit of silicon diodes subjected to high-fluence electron irradiation

N. A. Poklonski, N. I. Gorbachuk, S. V. Shpakovski, A. Wieck

Journal:

Technical Physics

Year:

2010

Language:

english

File:

PDF, 268 KB

english, 2010

46

Inversion of the EPR signal from P1 centers in a synthetic diamond single crystal under normal conditions

N. A. Poklonski

Journal:

Technical Physics Letters

Year:

2006

Language:

english

File:

PDF, 198 KB

english, 2006

47

Effect of the Moisture Content on the Electrical Conductivity of SiO2/LiCl Xerogels

N. I. Gorbachuk, V. S. Gurin, N. A. Poklonski

Journal:

Glass Physics and Chemistry

Year:

2001

Language:

english

File:

PDF, 66 KB

english, 2001

48

Totally symmetric vibrations of armchair carbon nanotubes

N.A. Poklonski, E.F. Kislyakov, Nguyen Ngoc Hieu, S.A. Vyrko, O.N. Bubel’, Nguyen Ai Viet

Journal:

Computational Materials Science

Year:

2010

Language:

english

File:

PDF, 275 KB

english, 2010

49

Optical and paramagnetic properties of polycrystalline CVD-diamonds implanted with deuterium ions

A. V. Khomich, R. A. Khmelnitsky, N. A. Poklonski, N. M. Lapchuk, A. A. Khomich, V. A. Dravin, O. N. Poklonskaya, E. E. Ashkinazi, I. I. Vlasov, E. V. Zavedeev, V. G. Ralchenko

Journal:

Journal of Applied Spectroscopy

Year:

2012

Language:

english

File:

PDF, 245 KB

english, 2012

50

Structural phase transition and band gap of uniaxially deformed (6,0) carbon nanotube

Poklonski, Nikolai A., Ratkevich, Sergey V., Vyrko, Sergey A., Kislyakov, Eugene F., Bubel’, Oleg N., Popov, Andrei M., Lozovik, Yurii E., Hieu, Nguyen Ngoc, Viet, Nguyen Ai

Journal:

Chemical Physics Letters

Year:

2012

Language:

english

File:

PDF, 803 KB

english, 2012